38 years ago (1986), yours truly produced a video with the help of the Boeing Television Studio describing in detail the lab procedure to solve for the bulk resistances of the bipolar junction transistor (BJT). Sadly, the audio is a little distorted but I may be able to improve that at a later date.
The video was sponsored by the Boeing Off Hours Education system where I taught computer simulation of electronic circuitry in the off hours. In the daytime hours I was assigned to Boeing’s B1-B Bomber Avionics development. See if you can recognize me. I looked a lot different 38 years ago, but my voice was somewhat the same. I’m the guy in the suit and tie. That’s how we dressed for work in those days. The “engineer” I invite to the equipment table was actually the Boeing Televison Studio camera man.
The procedure I describe in the video is my own concoction. It relies on recognizing that the bipolar junction transistor is a pair of diodes mounted anode to anode but doped for special performance. You could use a BJT in a reverse mode in a circuit and it would still work, though with different characterizations. That is, you could consider the emitter terminal to be the collector, let the base remain as the base, and let the designated collector be considered as the emitter. The primary difference in the operation would be that if the gain were 100 in a regular mounting configuration, the reversed configuration would net a gain of 5 or 6. The reverse gain in a forward mounting configuration (traditional) is the primary factor in what the saturation voltage will be, Vce.
